ASMC 2019 - Session 4

Tuesday, May 7

Session 4 - Advanced Equipment Processes and Materials I (Sponsored by IBM)

Chairs: Shekar Bakshi, Analog Devices; Fred Bouchard, Sparetech; Leonard Rubin, Axcelis
Plasma etch is increasingly critical to advanced IC manufacturing. This session will cover chamber surface treatment, in situ cleans, pre-epi etch treatment, plasma balancing, and edge ring design.

4.1   Fluorine Saturated Yttrium (YF) Based Coatings for Advanced Semiconductor ULSI Manufacturing
G. Padron-Wells, M. VanOverloop, J Yeo, A. Abit, K. Finneran, L. McLaughlin, R. Greuter, Samsung Austin Semiconductor

4.2   Temperature Profile Analysis of Diffusion Furnace Silicon Nitride Deposited Film
Satyajit Shinde, Lawrence Mbonu, Xiao Chen, Samsung Austin Semiconductor

4.3   Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory 
Cheng-Yi Lung, Yao-An Chung, Ming-Tsung Wu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu, Macronix International

4.4   Optimizing Antenna Voltage Balancing for Remote Helical ICP Plasma Discharge Using Oxygen, Hydrogen, Nitrogen, Ammonia and Its Mixtures
Sung Jin Yoon, Jongwoo Park, Aram Kim, PSK Inc.

4.5   Improved Liquid Source Vaporization for CVD & ALD Precursors 
Kathleen Erickson, Thuc Dinh, Eric Ellsworth, Hongxu Duan, MSP/a division of TSI

3:35   Networking Break