ASMC 2019 - Session 4

Tuesday, May 7

Session 4 - Advanced Equipment Processes and Materials I (Sponsored by IBM)

Chairs: Shekar Bakshi, Analog Devices; Fred Bouchard, Sparetech; Leonard Rubin, Axcelis
Plasma etch is increasingly critical to advanced IC manufacturing. This session will cover chamber surface treatment, in situ cleans, pre-epi etch treatment, plasma balancing, and edge ring design.

1:30 
4.1   Fluorine Saturated Yttrium (YF) Based Coatings for Advanced Semiconductor ULSI Manufacturing
G. Padron-Wells, M. VanOverloop, J Yeo, A. Abit, K. Finneran, L. McLaughlin, R. Greuter, Samsung Austin Semiconductor

1:55
4.2   Temperature Profile Analysis of Diffusion Furnace Silicon Nitride Deposited Film
Satyajit Shinde, Lawrence Mbonu, Xiao Chen, Samsung Austin Semiconductor

2:20
4.3   Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory 
Cheng-Yi Lung, Yao-An Chung, Ming-Tsung Wu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu, Macronix International

2:45
4.4   Optimizing Antenna Voltage Balancing for Remote Helical ICP Plasma Discharge Using Oxygen, Hydrogen, Nitrogen, Ammonia and Its Mixtures
Sung Jin Yoon, Jongwoo Park, Aram Kim, PSK Inc.

3:10
4.5   Improved Liquid Source Vaporization for CVD & ALD Precursors 
Kathleen Erickson, Thuc Dinh, Eric Ellsworth, Hongxu Duan, MSP/a division of TSI

3:35   Networking Break